Journal
ACS NANO
Volume 4, Issue 6, Pages 3288-3292Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn100323x
Keywords
NiO; conducting filaments; exchange coupling; resistive switching
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Funding
- BK21 Project [2010]
- Korean government (MEST) [2010-00001198]
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We report on the ferromagnetism of conducting filaments formed in a NiO thin film, which exhibited a typical bistable resistive switching characteristic. The NiO thin film showed an antiferromagnetic hysteresis loop for a high resistive state (R-OFF). However, for a low resistive state (R-ON), the conducting filaments exhibited a ferromagnetic hysteresis loop for the field cooling. The ferromagnetic hysteresis behavior of the R-ON state reveals switchable exchange coupling between the ferromagnetic Ni conducting filaments and the antiferromagnetic NiO layer.
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