4.8 Article

Controlling Band Gap Energies in Cluster-Assembled Ionic Solids through Internal Electric Fields

Journal

ACS NANO
Volume 4, Issue 10, Pages 5813-5818

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nn101640r

Keywords

cluster-assembled materials; arsenic clusters; band gap tuning

Funding

  1. U.S. Army Research Office (MURI) [W911NF-06-1-0280]
  2. Kavli Foundation

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Assembling ionic solids where clusters are arranged in different architectures is a promising strategy for developing band gap-engineered nanomaterials. We synthesized a series of cluster-assembled ionic solids composed of [As-7-Au-2-As-7](4-) in zero-, one-, and two-dimensional architectures. Higher connectivity is expected to decrease the band gap energy through band broadening. However, optical measurements indicate that the band gap energy increases from 1.69 to 1.98 eV when moving from zero- to two-dimensional assemblies. This increase is a result of the local electric fields generated by the adjacent counterions, which preferentially stabilize the occupied cluster electronic states.

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