4.8 Article

Composition-Tuned ZnO-CdSSe Core-Shell Nanowire Arrays

Journal

ACS NANO
Volume 4, Issue 7, Pages 3789-3800

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nn100684q

Keywords

ZnO; CdSSe; chemical vapor deposition; core shell nanocables; photoelectrochemical cell

Funding

  1. NRF [R01-2008-000-10825-0, 2008-02364]
  2. MKE [12008-C1090-0804-0013]
  3. Ministry of Education, Science and Technology [R31-10035]
  4. MOST
  5. POSTECH
  6. Ministry of Education, Science & Technology (MoST), Republic of Korea [R31-2008-000-10035-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  7. Ministry of Public Safety & Security (MPSS), Republic of Korea [C1090-1021-0004] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  8. National Research Foundation of Korea [2009-0082527, 2008-0058718, R01-2008-000-10825-0, 2008-02364] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Vertically aligned ZnO-CdSSe core-shell nanocable arrays were synthesized with a controlled composition and shell thickness (10-50 nm) by the chemical vapor deposition on the pregrown ZnO nanowire arrays. They consisted of a composition-tuned single-crystalline wurtzite structure CdS1-xSex (x = 0, 0.5, and 1) shell whose [0001] direction was aligned along the [0001] wire axis of the wurtzite ZnO core. The analysis of structural and optical properties shows the formation of Zn containing alloy in the interface region between the ZnO core and shell, which can facilitate the growth of single-crystalline shell layers by reducing both the lattice mismatch and the number of defect sites. In contrast, the TiO2 (rutile) nanowire array can form the polycrystalline shell under the same condition. The photoelectrochemical cell using the ZnO-CdS photoelectrode exhibits a higher photocurrent and hydrogen generation rate than that using the TiO2-CdS one. We suggest that the formation of the CdZnSSe intermediate layers contributes to the higher photoelectrochemical cell performance of the ZnO-CdSSe nanocables.

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