Journal
ACS NANO
Volume 4, Issue 6, Pages 3169-3174Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn100551j
Keywords
graphene oxide; organic photovoltaics; hole transport layers; organic electronics
Categories
Funding
- National Science Council, Taiwan [NSC 98-2119-M-002-020-MY3, NSC 96-2112-M-002-030-MY3]
- Royal Society
- Centre for Advanced Ceramics (CASC) at Imperial College London
- Engineering and Physical Sciences Research Council [EP/F033605/1] Funding Source: researchfish
- EPSRC [EP/F033605/1] Funding Source: UKRI
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The utilization of graphene oxide (GO) thin films as the hole transport and electron blocking layer in organic photovoltaics (OPVs) is demonstrated. The incorporation of GO deposited from neutral solutions between the photoactive poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) layer and the transparent and conducting indium tin oxide (ITO) leads to a decrease in recombination of electrons and holes and leakage currents. This results in a dramatic increase in the OPV efficiencies to values that are comparable to devices fabricated with PEDOT:PSS as the hole transport layer. Our results indicate that GO could be a simple solution-processable alternative to PEDOT:PSS as the effective hole transport and electron blocking layer in OPV and light-emitting diode devices.
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