Journal
ACS NANO
Volume 4, Issue 5, Pages 2667-2672Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn1003138
Keywords
graphene; epitaxial graphene gate oxide; atomic layer deposition; Al(2)O(3); HfO(2); TiO(2); Ta(2)O(5)
Categories
Funding
- Naval Surface Warfare Center Crane [N00164-09-C-GR34]
- Cambridge ALD System
- WiteC Raman system
- National Nanotechnology Infrastructure Network at Penn State [JEOL 2010F TEM]
Ask authors/readers for more resources
We present the integration of epitaxial graphene with thin film dielectric materials for the purpose of graphene transistor development. The impact on epitaxial graphene structural and electronic properties following deposition of Al(2)O(3), HfO(2), TiO(2), and Ta(2)O(3) varies based on the choice of dielectric and deposition parameters. Each dielectric film requires the use of a nucleation layer to ensure uniform, continuous coverage on the graphene surface. Graphene quality degrades most severely following deposition of Ta(2)O(3), while the deposition if TiO(2) appears to improve the graphene carrier mobility. Finally, we discuss the potential of dielectric stack engineering for improved transistor performance.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available