Journal
ACS NANO
Volume 4, Issue 8, Pages 4815-4823Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn100686v
Keywords
directed self-assembly; graphoepitaxy; chemical epitaxy; block copolymer; photoresist
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We report novel strategies to integrate block copolymer self-assembly with 193 nm water immersion lithography. These strategies employ commercially available positive tone chemically amplified photoresists to spatially encode directing information into precise topographical or chemical prepatterns for the directed self-assembly of block copolymers. Each of these methods exploits the advantageous solubility and thermal properties of polarity-switched positive tone photoresist materials. Precisely registered, sublithographic self-assembled structures are fabricated using these versatile integration schemes which are fully compatible with current optical lithography patterning materials, processes, and tooling.
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