Journal
ACS NANO
Volume 4, Issue 12, Pages 7087-7092Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn101296x
Keywords
trilayer graphene; electronic transport; coulomb scattering; magneto resistance; energy gap
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Funding
- ASTAR SERC [082 101 0015]
- NRF-CRP
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The perpendicular magnetic field dependence of the longitudinal resistance in trilayer graphene at various temperatures has been systematically studied. For a fixed magnetic field, the trilayer graphene displays an intrinsic semiconductor behavior over the temperature range of 5-340 K. This is attributed to the parabolic band structure of trilayer graphene, where the Coulomb scattering is a strong function of temperature. The dependence of resistance on the magnetic field can be explained by the splitting of Landau levels (Lis). Our results reveal that the energy gap in the trilayer graphene is thermally activated and increases with root B.
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