Journal
ACS NANO
Volume 4, Issue 11, Pages 6477-6482Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn101410s
Keywords
atomic switch; tantalum pentoxide; first principles simulation; transport properties; conductive path; schottky barrier
Categories
Funding
- Scientific Research on Priority Area Nanoionics [439]
- Key Technology Atomic Switch Programmed Device
- Ministry of Education Culture Sports Science and Technology of Japan
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The conductive path formed by the interstitial Cu or oxygen vacancies in the Ta2O5 atomic switch were investigated in detail by first principles methods The calculated results indicated that the defect state induced by the interstitial Cu is located just at the Fermi level of the Cu and Pt electrodes in the Cu/Ta2O5/Pt heterostructure that conduction channel is formed in the Ta2O5 film via the interstitial Cu On the other hand oxygen vacancies in Ta2O5 do not form such a conduction channel because of the lower energy positions of their defect states The above results suggest that the,conductive path could be formed by interstitial Cu in the Ta2O5 atomic switch, whereas oxygen vacancies do not contribute to the formation of the conductive path
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