4.8 Article

Chemical Vapor Deposition Synthesis of N-, P-, and Si-Doped Single-Walled Carbon Nanotubes

Journal

ACS NANO
Volume 4, Issue 3, Pages 1696-1702

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/nn901599g

Keywords

SWNTs; doping; phosphorus; silicon; nitrogen

Funding

  1. CONACYT-Mexico Ph.D. Scholarship
  2. Rede Nacional de Pesquisa em Nanotubos de Carbono (MCT)
  3. PNPq (Brazil)
  4. AFOSR (USA)
  5. Instituto Nacional de Ciencia e Tecnologia de Nanoestruturas de Carbono (Fapemig and CNPq, Brazil)

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Here we report the synthesis of single-walled carbon nanotube bundles by chemical vapor deposition in the presence of electron donor elements (N, P, and Si). In order to introduce each dopant into the graphitic carbon lattice, different precursors containing the doping elements (benzylamine, pyrazine, triphenylphosphine, and methoxytrimethylsilane) were added at various concentrations into ethanol/ferrocene solutions. The synthesized nanotubes and byproduct were characterized by electron microscopy and Raman spectroscopy. Our results reveal intrinsic structural and electronic differences for the N-, P-, and Si- doped nanotubes. These tubes can now be tested for the fabrication of electronic nanodevices, and their performance can be observed.

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