Journal
ACS NANO
Volume 4, Issue 12, Pages 7315-7320Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn1021296
Keywords
ferroelectric polymer nanodot; carbon nanotube; field-effect transistor; nonvolatile memory device
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Funding
- Brain Korea 21 Project
- Korea Research Foundation [KRF-2008-313-C00309]
- Ministry of Education, Science and Technology, Republic of Korea [R31-2008-000-10059-0]
- Ministry of Education, Science & Technology (MoST), Republic of Korea [R31-2008-000-10059-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2008-313-C00309] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrate a field-effect nonvolatile memory device made of a ferroelectric copolymer gate nanodot and a single-walled carbon nanotube (SW-CNT). A position-controlled dip-pen nanolithography was performed to deposit a poly(vinylidene fluoride-ran-trifluoroethylene) (PVDF-TrFE) nanodot onto the SW-CNT channel with both a source and drain for field-effect transistor (FET) function. PVDF-TrFE was chosen as a gate dielectric nanodot in order to efficiently exploit its bipolar chemical nature. A piezoelectric force microscopy study confirmed the canonical ferroelectric responses of the PVDF-TrFE nanodot fabricated at the center of the SWOT channel. The two distinct ferroelectric polarization states with the stable current retention and fatigue-resistant characteristics make the present PVDF-TrFE-based FET suitable for nonvolatile memory applications.
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