Journal
ACS NANO
Volume 4, Issue 11, Pages 6343-6352Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn101369j
Keywords
reduced graphene oxide; organic semiconductors; OTFT; compatible interfaces; thin film morphology; contact resistance
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Funding
- NASA GSRP
- Samsung Advanced Institute of Technology
- Sloan Research Fellowship
- Center for Polymeric Interfaces and Macromolecular Assemblies (NSF Center MRSEC) [DMR 0213618]
- MoST [2006CB0N0702]
- MoE [20040055020]
- NSF of China [20774047, 60676051]
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Reduced graphene oxide (RGO) is an electrically conductive carbon based nanomaterial that has recently attracted attention as a potential electrode for organic electronics Here we evaluate several solution based methods for fabricating RGO bottom contact (BC) electrodes for organic film transistors (OTFTs), demonstrate functional p and n-channel devices with such electrodes and compare their electrical performance with analogous devices containing gold electrodes We show that the morphology of organic semiconductor films deposited on RGO electrodes is similar to that observed in the channel region of the devices and that devices fabricated with RGO electrodes have lower contact resistances compared, to those fabricated with gold contacts Although the conductivity of RGO is poor compared to that of gold, RGO is still an enticing electrode material for organic electronic devices possibly owing to the retention of desirable morphological features, lower contact resistance, lower cost, and solution processability
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