Synthesis of Bandgap-Controlled Semiconducting Single-Walled Carbon Nanotubes

Bandgap-controlled semiconducting single-walled carbon nanotubes (s-SWNTs) were synthesized using a uniquely designed catalytic layer (Al2O3/Fe/Al2O3) and conventional thermal chemical vapor deposition. Homogeneously sized Fe catalytic nanoparticles were prepared on the Al2O3 layer and their sizes were controlled by simply modulating the annealing time via heat-driven diffusion and subsequent evaporation of Fe at 800 degrees C. Transmission electron microscopy and Raman spectroscopy revealed that the synthesized SWNTs diameter was manipulated from 1.4 to 0.8 nm with an extremely narrow diameter distribution below 0.1 nm as the annealing time is increased. As a result, the bandgap of semiconducting SWNTs was successfully controlled, ranging from 0.53 to 0.83 eV, with a sufficiently narrow energy distribution, which can be applied to field-effect transistors based on SWNTs.