Journal
ACS NANO
Volume 4, Issue 4, Pages 1805-1812Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn900969y
Keywords
nanotubes; nanowires; nanoparticles; chemical vapor deposition
Categories
Funding
- Max Planck Society
Ask authors/readers for more resources
Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si substrates. Using hydrogen instead of oxygen plasma during NP preparation enhances the catalytic activity of AuNPs (diameters of 10-20 nm), enabling Si 1D growth at temperatures as low as 320 degrees C. On BSG, Si nanowires (SiNWs) are identified and reasonable vertical alignment is achieved at 420 degrees C. On SiOx/Si, only Si lanotubes (SiNTs) are obtained right up to 420 degrees C. A mixture of SiNTs and SiNWs is observed at 450 degrees C and only SiNWs grow at 480 degrees C.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available