Journal
ACS NANO
Volume 3, Issue 6, Pages 1407-1414Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn900197h
Keywords
p-type SWNT; p-n heterojunction; n-type Si; photovoltaic device; thionyl chloride
Categories
Funding
- DOE [DE-FG 36-06 GO 86072]
- Arkansas Science and Technology Authority (ASTA) [08-CAT-03]
Ask authors/readers for more resources
Photovoltaic conversion was achieved from high-density p-n heterojunctions between single-wall carbon nanotubes (SWNTs) and n-type crystalline silicon produced with a simple airbrushing technique. The semitransparent SWNT network coating on n-type silicon substrate forms p-n heterojunctions and exhibits rectifying behavior. Under illumination the numerous heterojunctions formed between substrate generate electron-hole pairs, which are then split and transported through SWNTs (holes) and n-Si (electrons), respectively. The nanotubes serve as both photogeneration sites and a charge carriers collecting and transport layer. Chemical modification by thionyl chloride of the SWNT coating films was found to significantly increase the conversion efficiency by more than 50% through adjusting the Fermi level and increasing the carder concentration and mobility. Initial tests have shown a power conversion efficiency of above 4%, proving that SOCl2 treated-SWNT/n-Si configuration is suitable for light-harvesting at relatively low cost.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available