Journal
ACS NANO
Volume 3, Issue 9, Pages 2674-2676Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn900744z
Keywords
graphene; transistor; helium ion microscope; etching
Categories
Funding
- Al-19 exander von Humboldt foundation through a Feodor Lynen Research Fellowship
- NRI INDEX program
Ask authors/readers for more resources
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions In a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (02) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available