Ultrahigh-Performance Inverters Based on CdS Nanobelts

We report ultrahigh-performance inverters, each consisting of two top-gate metal-oxide-semiconductor field-effect transistors based on n-CdS nanobelts. High-kappa HfO2 dielectrics are used as the top-gate oxide layers. The inverters have a large supply voltage (V-DD) range (from 50 mV to 10 V) and very high voltage gain (similar to 10, 100, and 1000 at V-DD = 0.2, 1, and 10 V, respectively). Current consumption is less than 7 nA at V-DD = 1 V, corresponding to a power consumption of less than 7 nW. The high and low output voltages are close to full rail. The inverters also exhibit good dynamic behavior with square wave input at frequencies up to 1 kHz. The operation of the inverters is analyzed in detail. The inverters are promising for future low power high performance logic circuit applications.