Journal
ACS NANO
Volume 3, Issue 8, Pages 2225-2234Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn9005736
Keywords
carbon nanotube; electroluminescence; field-effect transistor; electrolyte gating; ambipolar
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Funding
- U.S. Department of Energy [DE-FG02-07-ER46453, DE-FG02-07-ER46471]
- U.S. Department of Energy, office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
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We demonstrate near-infrared electroluminescence from ambipolar, electrolyte-gated arrays of highly aligned single-walled carbon nanotubes (SWNT). Using electrolytes instead of traditional oxide dielectrics in carbon nanotube field-effect transistors (FET) facilitates injection and accumulation of high densities of holes and electrons at very low gate voltages with minimal current hysteresis. We observe numerous emission spots, each corresponding to individual nanotubes in the array. The positions of these spots indicate the meeting point of the electron and hole accumulation zones determined by the applied gate and source-drain voltages. The movement of emission spots with gate voltage yields information about relative band gaps, contact resistance, defects, and interaction between carbon nanotubes within the array. Introducing thin layers of HfO2 and TiO2 provides a means to modify exciton screening without fundamentally changing the current-voltage characteristics or electroluminescence yield of these devices.
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