Journal
ACS NANO
Volume 3, Issue 11, Pages 3431-3436Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn9008615
Keywords
epitaxial graphene; silicon carbide; PTCDA; scanning tunneling microscopy; photoemission spectroscopy
Categories
Funding
- NRFCRP [R-143-000-360-281]
- ARF [R-143-000-392-133, R-144000-192-116]
Ask authors/readers for more resources
In situ low-temperature scanning tunneling microscopy is used to study the growth of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on epitaxial graphene (EG) on 6H-SiC(0001), as well as on HOPG for comparison. PTCDA adopts a layer-by-layer growth mode, with its molecular plane lying flat on both surfaces. The PTCDA films grow continuously over the EG step edges, but not on HOPG. STS performed on single-layer PTCDA on monolayer EG shows a wide band gap larger than 3.3 eV, consistent with pristine PTCDA films. Synchrotron-based high-resolution photoemission spectroscopy reveals weak charge transfer between PTCDA and EG. This suggests weak electronic coupling between PTCDA and the underlying EG layer.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available