Journal
ACS NANO
Volume 2, Issue 10, Pages 2154-2159Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nn800368s
Keywords
carbon nanotube; diode; p-n; photovoltaic; Raman spectroscopy
Categories
Funding
- NSF [CCF-0506660, DMR-0348585]
- Center for Microanalysis of Materials
- University of Illinois at Urbana-Champaign
- U.S. Department of Energy [DEFG02-91-ER45439]
Ask authors/readers for more resources
Two terminal abrupt junction diodes are fabricated from single semiconducting carbon nanotubes with simple photopatterned polymer layers defining air-stable p- and n-regions. These intratube diodes show nearly ideal behavior with relatively low series resistance and no sign of Zener breakdown at room temperature. Spatial doping profiles measured by micro-Raman spectroscopy and selective electrochemical gating of the n-region indicate that diode performance depends strongly on relative doping levels. A short circuit current of 1.4 nA with an open circuit voltage of 205 mV are measured when illuminated to saturation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available