Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 40, Pages 33768-33772Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b12385
Keywords
threshold switching; resistive switching; programmable metallization cell; sneak current; conductive channel; crossbar array
Funding
- National Research Foundation of Korea (NRF) grant - Korean government (Ministry of Science, ICT & Future Planning) [2016R1A3B1908249]
- Samsung Semiconductor Research Center in Korea University
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We fabricate a Pt/Ag:SiOxNy/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiOxNy layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 degrees C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiOxNy-based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance.
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