Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 37, Pages 31472-31479Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b09840
Keywords
ultrasensitive; low-power oxide transistor; electronic skin; mechanotransducer; microstructured and deformable ionic dielectrics
Funding
- Center for Advanced Soft-Electronics under the Global Frontier Project of the National Research Foundation (NRF) of Korea - Ministry of Science, ICT [CASE-2014M3A6A5060932]
- Basic Science Research Program of the National Research Foundation (NRF) of Korea - Ministry of Science, ICT [2017R1A2B4012819, 2017R1A5A1015596]
- MIST (Ministry of Science and ICT), Korea, under the ICT Consilience Creative Program [IITP-2018-2017-0-01015]
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The development of a highly sensitive artificial mechanotransducer that mimics the tactile sensing features of human skin has been a big challenge in electronic skin research. Here, we demonstrate an ultrasensitive, low-power oxide transistor-based mechanotransducer modulated by microstructured, deformable ionic dielectrics, which is consistently sensitive to a wide range of pressures from 1 to 50 kPa. To this end, we designed a viscoporoelastic and ionic thermoplastic polyurethane (i-TPU) with micropyramidal feature as a pressure-sensitive gate dielectric for the indium-gallium-zinc-oxide (IGZO) transistor-based mechanotransducer, which leads to an unprecedented sensitivity of 43.6 kPa(-1), which is 23 times higher than that of a capacitive mechanotransducer. This is because the pressure-induced ion accumulation at the interface of the i-TPU dielectric and IGZO semiconductor effectively modulates the conducting channel, which contributed to the enhanced current level under pressure. We believe that the ionic transistor-type mechanotransducer suggested by us will be an effective way to perceive external tactile stimuli over a wide pressure range even under low power (<4 V), which might be one of the candidates to directly emulate the tactile sensing capability of human skin.
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