Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 36, Pages 30522-30531Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b08042
Keywords
electrochemical oxygen doping; strongly correlated oxides; metal-insulator transition; reversible switching; high-temperature superconductors
Funding
- Spanish Ministry of Economy and Competitiveness through the Severo Ochoa Programme for Centres of Excellence in RD [SEV-2015-0496]
- CONSOLIDER Excellence Network [MAT2015-68994-REDC]
- COACHSUPENERGY project [MAT2014-51778-C2-1-R]
- European Regional Development Fund
- European Union [MP1201, CA 16218, ERC-2014-ADG-669504]
- Catalan Government [2014-SGR-753, Xarmae]
- Spanish Ministry of Economy [BES-2016-077310, BES-2012-053814]
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Modulation of carrier concentration in strongly correlated oxides offers the unique opportunity to induce different phases in the same material, which dramatically change their physical properties, providing novel concepts in oxide electronic devices with engineered functionalities. This work reports on the electric manipulation of the superconducting to insulator phase transition in YBa2Cu3O7-delta thin films by electrochemical oxygen doping. Both normal state resistance and the superconducting critical temperature can be reversibly manipulated in confined active volumes of the film by gate-tunable oxygen diffusion. Vertical and lateral oxygen mobility may be finely modulated, at the micro- and nano-scale, by tuning the applied bias voltage and operating temperature thus providing the basis for the design of homogeneous and flexible transistor-like devices with loss-less superconducting drain source channels. We analyze the experimental results in light of a theoretical model, which incorporates thermally activated and electrically driven volume oxygen diffusion.
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