Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 10, Issue 35, Pages 29848-29856Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b11559
Keywords
rubrene; molybdenum disulfide; ambipolar; photovoltaic; transistor
Funding
- National Research Foundation of Korea (NRF) - Korean government [2015R1A2A2A01003805, 2018R1A2B2006369, 2017R1D1A1B03035441]
- Center for Advanced Meta Materials (CAMM, as the Global Frontier Project) [2014M3A6B3063710]
- KU-KIST School Project
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A several-layer n-type MoS2 was partially hybridized with an organic crystalline p-type rubrene nanosheet through van der Waals interactions to fabricate a two-dimensional (2-D) lateral-type n-p heterojunction optoelectronic device. The field-effect transistors (FETs) using lateral-type MoS2/rubrene hybrids exhibited both gate tunable diode and anti-ambipolar transistor characteristics. The FET devices show the coexistence of n-type states, p-type states, and off-states controlled by the gate bias. From the photocurrent mapping experiments, the gate-bias-dependent photovoltaic effect was observed from the heterojunction regions of the MoS2/rubrene FETs. FETs were successfully operated by light irradiation without applying source-drain bias and controlled using gate bias. These devices represent new solar-energy-driven 2-D multifunctional electronic devices. Furthermore, the photovoltaic
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