Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 6, Issue 16, Pages 14116-14122Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am503442c
Keywords
interface engineering piezopotential; Schottky barrier; ZnO; self-powered; UV detector
Funding
- National Major Research Program of China [2013CB932602]
- Program of International ST Cooperation [2012DFA50990]
- NSFC [51232001, 51172022, 51372020]
- Beijing Municipal Commission of Education
- Fundamental Research Funds for the Central Universities
- Program for Changjiang Scholars and Innovative Research Team in University
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Exploiting piezoelectric effect to engineer material interface has been confirmed as a promising way to optimize the performance of optoelectronic devices. Here, by using this effect, we have greatly improved the photoresponse of the fabricated ZnO/Au Schottky junction based self-powered UV detector. A 440% augment of photocurrent, together with 5x increased sensitivity, was obtained when the device was subjected to a 0.580% tensile strain. The enhancement can be attributed to the facility separation and extraction of photoexcites due to the formation of the stronger and expanding built-in field, which is a result of charge redistribution induced by piezoelectric polarization at the ZnO/Au interface. This study not only can strengthen the understanding of piezoelectric effects on energy devices but also can be extended to boost performances of optoelectronic devices made of piezoelectric semiconductor materials.
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