Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 6, Issue 10, Pages 7028-7031Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am501912q
Keywords
selective etching; zinc oxide; ZnO; aluminum oxide; Al2O3; thin film transistor; TFT; metal oxide semiconductor; metal oxide thin film transistors; metal oxide gas sensor; InGaZnO; GaInZnO
Funding
- Dow Chemical Company
- National Science Foundation (NSF) Nanosystems Engineering Research Center (ERC) on Advanced Self-Powered Systems of Integrated Sensor Technologies [EEC-1160483]
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We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and 12 will etch Al2O3 at useful rate with minimal attack of ZnO. Highly selective etching of Al2O3 over ZnO (selectivity >400:1) and an Al2O3 etch rate of similar to 50 nm/min can be obtained using a pH 12 etch solution at 60 degrees C.
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