Emission-Tunable CuInS2/ZnS Quantum Dots: Structure, Optical Properties, and Application in White Light-Emitting Diodes with High Color Rendering Index

Synthesis and application of CuInS2/ZnS core/shell quantum dots (QDs) with varying [Cu]/[In] ratios were conducted using a stepwise solvothermal route. CuInS2(CIS) core QDs with varying [Cu]/[In] ratios exhibited deep-red emissions result from donor-acceptor pair recombination. The absorption and emission band gap of the CuInS2 QDs increased with the decrease in Cu content. The emission bands of the CuInS2/ZnS were tuned from 550 to 616 nm by controlling the [Cu]/[In] ratio after coating ZnS layer. The CIS QDs model was developed to elucidate the synthesized crystal structure and photoluminescence of the QDs with various [Cu]/[In] ratios. Temperature-dependent photoluminescence spectra of the CIS2/ZnS QDs were also investigated. The temperature dependency of the photoluminescence energy and intensity for various CIS/ZnS QDs were studied from 25 to 200 degrees C. Efficient white light-emitting diodes with high color rendering index values (Ra = 90) were fabricated using CIS/ZnS QDs as color converters in combination with green light-emitting Ba2SiO4:Eu2+ phosphors and blue light-emitting diodes.