Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 6, Issue 23, Pages 20887-20894Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am5054338
Keywords
self-powered; broadband photodetector; heterojunctions; silicon nanowire array; cupric oxide; response speed
Funding
- National Natural Science Foundation of China [11104283, 21271177, 11174172, 51302081]
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
- National Basic Research Program of China [2010CB934103]
- Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics [KF201207]
Ask authors/readers for more resources
A new self-powered broadband photodetector was fabricated by coating an n-silicon nanowire (n-Si NW) array with a layer of p-cupric oxide (CuO) nanoflakes through a new simple solution synthesis method. The p-n heterojunction shows excellent rectification characteristics in the dark and distinctive photovoltaic behavior under broadband light illumination. The photoresponse of the detector at zero bias voltage shows that this self-powered photodetector is highly sensitive to visible and near-infrared light illuminations, with excellent stability and reproducibility. Ultrafast response rise and recovery times of 60 and 80 mu s, respectively, are shown by the CuO based nanophotodetector. In addition, the broadband photodetector can also provide a rapid binary response, with current changing from positive to negative upon illumination under a small bias. The binary response arises from the photovoltaic behavior and the low turn-on voltage of the CuO/Si NW device. These properties make the CuO/Si NW broadband photodetector suitable for applications that require high response speeds and self-sufficient functionality.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available