Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 6, Issue 15, Pages 12744-12751Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am502609c
Keywords
thin films; solar cells; kesterites; Cu2ZnSn(S,Se)(4); secondary phases; Sn(S,Se); chemical etching
Funding
- People Program (Marie Curie Actions) of the European Union's Seventh Framework Program under REA [316488]
- European Regional Development Funds (ERDF
- FEDER Programa Competitivitat de Catalunya)
- China Scholarship Council [201206340113]
- FPI-MINECO [BES-2011-045774]
- PTA fellowship [PTA2011-5985-1]
- FPU fellowship [FPU12/05508]
- Juan de la Cierva [JCI-2011-10782]
- Ramon y Cajal [RYC-2011-09212]
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The control and removal of secondary phases is one of the major challenges for the development of Cu2ZnSn(S,Se)(4) (CZTSSe)-based solar cells. Although etching processes have been developed for Cu(S,Se), Zn(S,Se), and CuSn(S,Se) secondary phases, so far very little attention has been given to the role of Sn(S,Se). In this paper, we report a chemical route using a yellow (NH4)(2)S solution to effectively remove Sn(S,Se). We found that Sn(S,Se) can form on the surface either because of stoichiometric deviation or by condensation. After etching, the efficiency of devices typically increases between 20 and 65% relative to the before etch efficiencies. We achieved a maximum 5.9% efficiency in Se-rich CZTSSe-based devices. It is confirmed that this feature is related not only to the removal of Sn(S,Se) but also to the unexpected passivation of the surface. We propose a phenomenological model for this passivation, which may open new perspectives for the development of CZTSSe-based solar cells.
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