Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 6, Issue 8, Pages 5651-5656Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am5001773
Keywords
N,N,N ',N '-tetraphenyl-benzidine (TPB); perovskite solar cell; metal-semiconductor (M-S) interface; modification
Funding
- National Key Basic Research Program (973 project) [2012CB932903]
- NSFC [21173260, 91233202]
- Beijing Science and Technology Committee [Z131100006013003]
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A thin wide band gap organic semiconductor N,N,N',N'-tetraphenyl-benzidine layer has been introduced by spin-coating to engineer the metal-semiconductor interface in the hole-conductor-free perovsldte solar cells. The average cell power conversion efficiency (PCE) has been enhanced from 5.26% to 6.26% after the modification and a highest PCE of 6.71% has been achieved. By the aid of electrochemical impedance spectroscopy and dark current analysis, it is revealed that this modification can increase interfacial resistance of CH3NH3PbI3/Au interface and retard electron recombination process in the metal-semiconductor interface.
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