Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 6, Issue 2, Pages 1288-1293Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am405141s
Keywords
Cl-doped ZnO; nanowires; transparent conductor; photoelectrochemical cell
Funding
- Air Force under Award [FA9550-13-1-0168, FA9550-09-1-0482]
- UW-NSF Nanoscale Science and Engineering Center (NSEC) [DMR 0425880]
- UW Materials Research Science & Engineering Center under NSF [DMR-1121288]
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Doping semiconductor nanowires (NWs) for altering their electrical and optical properties is a critical strategy for tailoring the performance of nanodevices. ZnO NWs grown by hydrothermal method are pervasively used in optoelectronic, photovoltaic, and piezoelectric energy-harvesting devices. We synthesized in situ Cl-doped ZnO NWs with metallic conductivity that would fit seamlessly with these devices and improve their performance. Possible Cl doping mechanisms were discussed. UV-visible absorption spectroscopy confirmed the visible light transparency of Cl-doped ZnO NWs. Cl-doped ZnO NW/TiO2 core/shell-structured photoelectrochemical (PEC) anode was fabricated to demonstrate the application potential of highly conductive ZnO NWs. Higher photocurrent density and overall PEC efficiency compared with the undoped ZnO NW-based device were achieved. The successful doping and low resistivity of ZnO could unlock the potential of ZnO NWs for applications in low-cost flexible transparent electrodes.
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