Direct Electrochemical Synthesis of Reduced Graphene Oxide (rGO)/Copper Composite Films and Their Electrical/Electroactive Properties

Electrical contact materials with excellent performances are crucial for the development and safe use of electrical contacts in different applications. In our work, reduced graphene oxide (rGO)/copper (Cu) composite films, as potential electrical contact materials, have been synthesized on copper foil with one-step electrochemical reduction deposition method. Cyclic voltammetry (CV) was used to define the deposition conditions, and confocal Raman microscopy (CRM), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were used to characterize the chemical compositions, molecular and micro- and nano-structures of the composite films. Atomic force microscopy/scanning Kelvin probe force microscopy (AFM/SKPFM), conductive AFM (C-AFM) as well as impedance analysis were employed to evaluate the electroactive/electrical properties of the prepared composite films, respectively. The CRM and XPS results suggest that the rGO/Cu composite films can be synthesized through one-step electrochemical codeposition using suitable precursor solutions. Within a short deposition period, the growth of discrete nanograins in the composite film predominates, whereas pine-tree-leaf nanostructures are formed in the composite film when the deposition period is long, due to the chelating role of GO or rGO to regulate the growth rate of metallic copper nanograins. The electrical resistivity of the composite films is lower than the polished Cu foil and the electrodeposited Cu film, probably due to the higher conductivity (enhanced transfer of charge carriers) of the rGO incorporated in the composite films. The Volta potential variation in the rGO/Cu composite film is quite different from that in the electrodeposited Cu film. The electroactivity of the rGO/Cu composite films is higher than the electrodeposited Cu film, but lower than polished Cu foil, and the underlying mechanisms have been discussed.