Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 6, Issue 16, Pages 13461-13469Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am502246j
Keywords
zinc oxide; cuprous oxide; nanowire; electrodeposition; photovoltaic device
Funding
- Incorporated Agency New Energy and Industrial Development Organization (NEDO) under the Japanese Ministry of Economy, Trade, and Industry (METI)
- Japan-France Integrated Action Program (SAKURA) under the Japan Society of the Promotion of Science (JSPS)
- Amano Industrial Research Institute Foundation
- [25281062]
- Grants-in-Aid for Scientific Research [25281062] Funding Source: KAKEN
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Cl-doped ZnO-nanowire (Cl:ZnO-nws)/Cu2O photovoltaic devices were prepared by electrodeposition in aqueous solutions, and the effects of the insertion of the highly resistive ZnO (i-ZnO) layer has been demonstrated by an improvement of the photovoltaic performance. The Cl:ZnO-nws and i-ZnO layer were prepared by electrodeposition in a zinc chloride aqueous solution with saturated molecular oxygen and simple zinc nitrate aqueous solution, respectively. The i-ZnO layer was directly deposited on the CI:ZnO-nws and suppressed the electrodeposition of the Cu2O layer on the CI:ZnO-nws. The insertion of the i-ZnO layer between the Cl:ZnO-nws and Cu2O layers induced an improvement in the photovoltaic performance from 0.40 to 1.26% with a 0.35 V open circuit voltage, 7.1 mA.cm(-2) short circuit current density, and 0.52 fill factor due to the reduction of the recombination loss.
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