Lead Lanthanum Zirconate Titanate Ceramic Thin Films for Energy Storage

An acetic-acid-based sol-gel method was used to deposit lead lanthanum zirconate titanate (PLZT, 8/52/48) diffraction and scanning electron microscopy of the samples revealed that dense polycrystalline PLZT thin films formed thin films on either platinized silicon (Pt/Si) or nickel buffered by a lanthanum nickel oxide buffer layer (LNO/Ni). X-ray without apparent defects or secondary phases. The dielectric breakdown strength was greater in PLZT thin films deposited on LNO/Ni compared with those on Pt/Si, leading to better energy storage. Finally, optimized dielectric properties were determined for a 3-mu m-thick PLZT/LNO/Ni capacitor for energy storage purposes: DC dielectric breakdown strength of similar to 1.6 MV/cm (480 V), energy density of similar to 22 J/cc, energy storage efficiency of similar to 77%, and permittivity of similar to 1100. These values are very stable from room temperature to 150 degrees C, indicating that cost-effective, volumetrically efficient capacitors can be fabricated for high-power energy storage.