Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 5, Issue 8, Pages 2915-2919Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am400326t
Keywords
semiconductor nanocrystals; PbS; nanocrystal solid; DLTS; charge trapping; solar cells; Schottky interface
Funding
- Swiss National Science Foundation (SNSF)
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We demonstrate current-based, deep level transient spectroscopy (DLTS) on semiconductor nanocrystal solids to obtain quantitative information on deep-lying trap states, which play an important role in the electronic transport properties of these novel solids and impact optoelectronic device performance. Here, we apply this purely electrical measurement to an ethanedithiol-treated, PbS nanocrystal solid and find a deep trap with an activation energy of 0.40 eV and a density of N-T = 1.7 X 10(17) cm(-3). We use these findings to draw and interpret band structure models to gain insight into charge transport in PbS nanocrystal solids and the operation of PbS nanocrystal-based solar cells.
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