Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 5, Issue 19, Pages 9594-9604Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am402550s
Keywords
nanosheets; vapor deposition; GeSe; germanium monoselenide; layered compound; photodetector
Funding
- NUS MOE FRC Grant [R-144-000-281-112]
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We have synthesized high-quality, micrometer-sized, single-crystal GeSe nanosheets using vapor transport and deposition techniques. Photoresponse is investigated based on mechanically exfoliated GeSe nanosheet combined with Au contacts under a global laser irradiation scheme. The nonlinearship, asymmetric, and unsaturated characteristics of the I-V curves reveal that two uneven back-to-back Schottky contacts are formed. First-principles calculations indicate that the occurrence of defects-induced in-gap defective states, which are responsible for the slow decay of the current in the OFF state and for the weak light intensity dependence of photocurrent. The Schottky photodetector exhibits a marked photoresponse to NIR light illumination (maximum photoconductive gain similar to 5.3 x 10(2) % at 4 V) at a wavelength of 808 nm. The significant photoresponse and good responsitivity (similar to 3.5 A W-1) suggests its potential applications as photodetectors.
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