Synergistic Approach to High-Performance Oxide Thin Film Transistors Using a Bilayer Channel Architecture

We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 degrees C are similar to 5tmex larger (similar to 2.6 cm(2)/(V s)) than those of single-layer IGO TFTs (similar to 0.5 cm(2)/(V s)), reaching values comparable to single-layer combustion-processed In2O3 TFTs (similar to 3.2 cm(2)/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is similar to 0.0 V, and the current on/off ratio is significantly enhanced to similar to 1 x 10(8) (vs similar to 1 x 10(4) for In2O3). The microstructure and morphology of the In2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance.