Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 5, Issue 10, Pages 4417-4422Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am400786c
Keywords
field-effect transistor; conjugated polymer; monolayer; inverse photoemission spectroscopy; electron affinity; injection barrier
Funding
- JST, PRESTO
Ask authors/readers for more resources
We investigated the role of metal/organic semiconductor interface morphology on the charge transport mechanisms and energy level alignment of the n-channel semiconductor poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P-(NDI2ODT2)). Variable-temperature study of well-ordered edge-on-oriented P(NDI2OD-T2) monolayer and multilayer field-effect transistors fabricated via Langmuir-Schafer (LS) method reveals a higher activation energy for the edge-on morphology when compared to that extracted for the face-on oriented P(NDI2OD-T2) spin-coated films, which showed a weaker temperature dependence. Near-ultraviolet inverse photoemission and low-energy electron transmission spectroscopies are utilized to study these rnicrostructurally defined polymeric films. The cross correlations of these techniques with the device characterization reveals the role of the molecular orientation at the semiconductor/contact interface in shifting the charge injection barrier. Finally, we demonstrate that the injection barrier for electrons is higher for the LS/edge-on than in the spin-coated/face-on films.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available