Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 5, Issue 6, Pages 2249-2254Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am400168m
Keywords
electrochemical deposition; solvothermal process; resistive switching; quantum dots; charge traps; charge transport
Funding
- Australian Research Council [DP110102391, DP1096769, FT100100956, DP0988687]
- Australian Research Council [DP1096769, FT100100956] Funding Source: Australian Research Council
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We report a novel approach to improve the resistive switching performance of semiconductor nanorod (NR) arrays, by introducing ceria (CeO2) quantum dots (QDs) as surface charge trappers. The vertically aligned zinc oxide (ZnO) (NR) arrays were grown on transparent conductive glass by electrochemical deposition while CeO2 QDs were prepared by a solvothermal method. Subsequently, the as-prepared CeO2 QDs were embedded into a ZnO NR array by dip coating to obtain a CeO2 ZnO nanocomposite. Interestingly, such a device exhibits excellent resistive switching properties with much higher ON/OFF ratios, better uniformity, and stability over the pure ZnO and CeO2 nanostructures. The origin of resistive switching was studied and the role of heterointerface was discussed.
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