Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 5, Issue 19, Pages 9429-9434Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am403243g
Keywords
hydrothermal process; metal oxide; self-assembly; oxygen vacancies; resistive switching; cerium oxide
Funding
- Australian Research Council [DP110102391]
- AINSE Project [ALNGRA13533]
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We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10(4), better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.
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