Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 5, Issue 13, Pages 6108-6112Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am400943z
Keywords
thin-film transistors; dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide; etch-stopper-layer; wet-etch; self-protection layer
Funding
- Samsung Display
- National Research Foundation of Korea (NRF) grant
- Korean Ministry of Education, Science and Technology (MEST) [2011-0028819]
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We investigated the chemical stability and electrical properties of dual-active-layered zinc tin oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier, concentration due to the effect of Sn4+ doping.
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