Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 5, Issue 16, Pages 7831-7837Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am4016928
Keywords
resistive switching memory; ZnWOx interface engineering; ZnO; complementary resistive switching (CRS); sneak path
Funding
- National Science Council [NSC 101-2112-M-007-015-MY3, NSC 100-2120-M-007-008]
- National Tsing Hua University [102N2022E1]
- CNMM the National Tsing Hua University [101N2744E1]
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A spontaneously formed ZnO/ZnWOx bilayer resistive memory via an interfacial engineering by one-step sputtering process with controllable high resistance states was demonstrated. The detailed formation mechanism and microstructure of the ZnWOx layer was explored by X-ray photoemission spectroscopy (XPS) and transmission electron microscope in detail. The reduced trapping depths from 0.46 to 0.29 eV were found after formation of ZnWOx layer, resulting in an asymmetric I-V behavior. In particular, the reduction of compliance current significantly reduces the switching current to reach the stable operation of device, enabling less energy consumption. Furthermore, we demonstrated an excellent performance of the complementary resistive switching (CRS) based on the ZnO/ZnWOx bilayer structure with DC endurance >200 cycles for a possible application in three-dimensional multilayer stacking.
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