Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 5, Issue 15, Pages 7268-7273Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am4015956
Keywords
thermoelectrics; oxide semiconductors; transport properties; pulsed laser deposition; oxygen vacancies
Funding
- FIC grant of KAUST
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We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H-2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m(-1) K-1, and the estimated figure of merit is 0.29 at 1000 K.
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