Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 4, Issue 3, Pages 1693-1696Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am2018223
Keywords
zinc oxide; nanoparticles; plasma treatment; thin-film transistors
Funding
- Research Training Group [1161]
- Deutsche Forschungsgemeinschaft (DFG)
- Evonik Degussa GmbH, Germany
- Alexander von Humboldt foundation
- Feodor Lynen fellowship
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Thin-films of zinc oxide nanoparticles were investigated by photoluminescence spectroscopy and a broad defect-related yellow-green emission was observed. Oxygen plasma treatment was applied in order to reduce the number of defects, and the emission intensity was quenched to 4% of the initial value. Thin-film transistors that incorporate the nanoparticles as active semiconducting layers show an improved device performance after oxygen plasma treatment. The maximum drain current and the charge carrier mobility increased more than 1 order of magnitude up to a nominal value of 23 cm(2) V-(1) s(-1) and the threshold voltage was lowered.
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