Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 4, Issue 11, Pages 6176-6184Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am301793m
Keywords
organic field effect transistors; polymer dielectric; P(VDF-TrFE); charge transport; conjugated polymers; polymer blend
Funding
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology, Korea [2011-0031639]
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology (MEST) [2010-0023180]
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We report here the development of high-performance p- and n-channel organic field-effect transistors (OFETs) and complementary circuits using inkjet-printed semiconducting layers and high-k polymer dielectric blends of poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA). Inkjet-printed p-type polymer semiconductors containing alkyl-substituted thienylenevinylene (TV) and dodecylthiophene (PC12TV12T) and n-type poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-dithiophene)} (P(NDI2OD-T2)) OFETs typically show high field-effect mobilities (mu(FET)) of 0.2-0.5 cm(2)/(V s), and their operation voltage is effectively reduced to below 5 V by the use of P(VDF-TrFE):PMMA blends. The main interesting result is that the OFET characteristics could be tuned by controlling the mixing ratio of P(VDF-TrFE) to PMMA in the blended dielectric. The mu(FET) of the PC12TV12T OFETs gradually improves, whereas the P(NDI2OD-T2) OFET properties become slightly worse as the P(VDF-TrFE) content increases. When the mixing ratio is optimized, well-balanced hole and electron mobilities of more than 0.2 cm(2)/(V s) and threshold voltages below +/- 3 V are obtained at a 7:3 ratio of P(VDF-TrFE) to PMMA. Low-voltage-operated (similar to 2 V) printed complementary inverters are successfully demonstrated using the blended dielectric and exhibit an ideal inverting voltage of nearly half of the supplied bias, high voltage gains of greater than 25, and excellent noise margins of more than 75% of the ideal values.
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