Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 4, Issue 9, Pages 4781-4786Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am301138v
Keywords
graphene; p-n junction; self-assembled monolayers (SAMs); interface modification; thermally stable doping
Funding
- National Science Foundation [CHE-0822697, CHE-0848833, CMMI-0927736]
- Georgia Tech MRSEC
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1251639] Funding Source: National Science Foundation
- Division Of Chemistry
- Direct For Mathematical & Physical Scien [0848833] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [820382] Funding Source: National Science Foundation
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3-Aminopropyltriethoxysilane (APTES) and perfluorooctyltriethoxysilane (PFES) were used to modify the interface between transferred CVD graphene films and its supporting dielectric to create n-type and p-type graphene, respectively. A graphene p-n junction was obtained by patterning both modifiers on the same dielectric and verified through the creation of a field effect transistor (FET). Characteristic I-V curves indicate the presence of two separate Dirac points which confirms an energy separation of neutrality points within the complementary regions. This method minimizes doping-induced defects and results in thermally stable graphene p-n junctions for temperatures up to 200 degrees C.
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