Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 4, Issue 1, Pages 30-33Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am201435z
Keywords
h-BN membrane; ripples; bandgap; hydrogenation; plasma; TEM
Funding
- NSF/DMR [0706147]
- IFN
- National Science Foundation of China [20921004]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0706147] Funding Source: National Science Foundation
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Few-layer rippled hexagonal boron nitride (h-BN) membranes were processed with hydrogen plasma, which exhibit distinct and pronounced changes in its electronic properties after the plasma treatment. The bandgaps of the h-BN membrane reduced from similar to 5.6 eV at 0 s to similar to 4.25 eV at 250s, which is a signature of transition from the insulating to the semiconductive regime. It typically required 250 s of plasma treatment to reach the saturation. It illustrates that two-dimensional material with engineered electronic properties can be created by attaching other atoms or molecules.
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