Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 4, Issue 12, Pages 7042-7045Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am302378v
Keywords
random laser diode; multiple quantum wells; ZnO/MgxZn1-xO; TEM
Funding
- 973 Program [2011CB933300]
- National Natural Science Foundation of China [51071110, 40972044, 51271134, J1210061]
- China MOE NCET Program [NCET-07-0640]
- MOE Doctoral Fund [20090141110059]
- Fundamental Research Funds for the Central Universities
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Two kinds of laser diodes (LDs) comprised of ZnO/MgxZn1-xO (ZnO/MZO) multiple quantum wells (MQWs) grown on GaN (MQWs/GaN) and Si (MQWs/Si) substrates, respectively, have been constructed. The LD with MQWs/GaN exhibits ultraviolet random lasing under electrical excitation, while that with MQWs/Si does not. In the MQWs/Si, ZnO/MZO MQWs consist of nanoscaled crystallites, and the MZO layers undergo a phase separation of cubic MgO and hexagonal ZnO. Moreover, the Mg atom predominantly locates in the MZO layers along with a significant aggregation at the ZnO/MZO interfaces; in sharp contrast, the ZnO/MZO MQWs in the MQWs/GaN show a well-crystallized structure with epitaxial relationships among GaN, MZO, and ZnO. Notably, Mg is observed to diffuse into the ZnO well layers. The structure-optical property relationship of these two LDs is further discussed.
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