Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 4, Issue 12, Pages 6991-6997Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am3022448
Keywords
benzothienodithiophene (BTDT); organic thin-film transistor (OTFT); organic semiconductor; bottom-contact; mobility; film morphology
Funding
- National Science Council, Taiwan, Republic of China [NSC100-2628-M-008-004, NSC100-2627-E-006-001]
- Industrial Technology Research Institute of Taiwan
- National Research Foundation of Korea [2011-0007730]
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology, Korea [2011-0031628]
- Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Korea government Ministry of Knowledge Economy [20114010203090]
- National Research Foundation of Korea [2011-0007730] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Three benzo[d,d']thieno[3,2-b;4,5-b']dithiophene (BTDT) derivatives, end-functionalized with benzothiophenyl (BT-BTDT; 2), benzothieno[3,2-b]thiophenyl (BTT-BTDT; 3), and benzo[d,d']thieno[3,2-b;4,5-b']dithiophenyl (BBTDT; 4), were prepared for bottom-contact/bottom-gate organic thin-film;it transistors (OTFTs). An improved one-pot [2 + 1 + 1] synthetic method of BTDT with improved synthetic yield was achieved, which enabled the efficient realization of new BTDT-based semiconductors. All of the BTDT compounds exhibited high performance p-channel characteristics with carrier mobilities as high as 0.34 cm(2)/(V s) and a current on/off ratio of 1 X 10(7), as well as enhanced ambient stability. The device characteristics have been correlated with the film morphologies and microstructures of the corresponding compounds.
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