Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 3, Issue 3, Pages 765-773Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am101125d
Keywords
high temperature polyimide; anthracene moiety; nanoscale thin film; amorphous; in-plane orientation; nonvolatile polymer memory; bipolar switching; unipolar switching; space-charge-limited current; local filament formation
Funding
- National Research Foundation (NRF) of Korea of the Ministry of Education, Science and Technology (MEST)
- POS-CO
- POSTECH Foundation
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A high temperature polyimide bearing anthracene moieties, poly(3,3'-di(9-anthracenemethoxy)-4,4'-biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-AM PI) was synthesized. The polymer exhibits excellent thermal stability up to around 410 degrees C. This polymer is amorphous but orients preferentially in the plane of nanoscale thin films. In device fabrications of its nanoscale thin films with metal top and bottom electrodes no diffusion of the metal atoms or ions between the polymer and electrodes was found; however, the aluminum bottom electrode had somewhat undergone oxide layer (about 1.2 nm thick) formation at the surface during the post polymer layer formation process, which was confirmed to have no significant influence on the device performance. The polymer thin film exhibited excellent unipolar and bipolar switching behaviors over a very small voltage range, less than +/- 2 V. Further, the PI films show repeatable writing, reading, and erasing ability with long reliability and high ON/OFF current ratio (up to 10(7)) in air ambient conditions as well as even at temperatures up to 200 degrees C.
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