Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 4, Issue 1, Pages 382-390Publisher
AMER CHEMICAL SOC
DOI: 10.1021/am2014579
Keywords
copper indium disulfide; chemical deposition method; GISAXS; GIWAXS
Funding
- Christian Doppler Research Association (CDG)
- federal ministry of Economy, Family and Youth of Austria
- Isovoltaic AG
- European Community [226716]
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Copper indium disulfide (CuInS2, CIS) thin films were prepared by an alternative solution-based coating process adapted from the well-established aqueous metal salt/thiourea precursor system. The temperature for the decomposition of the precursors and the formation of CIS was lowered significantly to 130 degrees C by using the strongly coordinating solvent pyridine instead of the commonly used water. In addition, the influence of different annealing temperatures and concentrations of thiourea (TU) in the precursor solution on the obtained CIS samples was investigated. The films possess highly beneficial properties for photovoltaic applications, showing a chalcopyrite crystal structure, a high optical absorption (>10(4) cm(-1)) and an optical band gap between 1.45 and 1.51 eV. Chemical and morphological changes during the thin film formation were detected and explained by time-resolved simultaneous grazing incident small- and wide-angle X-ray scattering (GISAXS, GIWAXS) measurements, scanning electron microsccopy (SEM) and simultaneous thermogravimetry/mass spectroscopy (TG/MS).
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